a-SiGe:H materials and devices deposited by hot wire CVD using a tantalum filament operated at low temperature

We report the deposition of improved hydrogenated amorphous silicon germanium (a-SiGe:H) films by the hot wire CVD (HWCVD) technique using a tantalum filament operating at a low temperature. We gauge the material quality of the a-SiGe:H films by comparing infrared, small angle X-ray scattering (SAXS), photocapacitance and conductivity measurements to earlier results, and fabricate single junction n-i-p solar cell devices using these i-layers.