Monte Carlo simulation of hole non-stationary transports in UTB SOI pMOSFET

UTB SOI device as a kind of non-conventional structure, are hope to take place of conventional CMOS in near future. Many works have been done on this kind of devices but rarely work has investigated the non-stationary transports effect in pMOSFET. In this paper, hole transports in UTB SOI pMOSFET are studied by using 2-D full band ensemble Monte Carlo device simulator. The hole non-stationary transport effect is important in sub-100nm UTB device. The hole velocity overshooting make the device performance keep increasing as channel length scaling down. The UTB SOI pMOSFETs show a better scalability than nMOSFETs.