Flip-chip mounted 26 V GaInP/GaAs power HBTs

GaInP/GaAs HBTs suitable for high-voltage operation (/spl ges/ 26 V) were developed. The HBTs show high current driving capabilities delivering at least 3 A of peak DC current. Furthermore, high power levels beyond 10 W corresponding to power densities of up to 360 kW/cm/sup 2/ were achieved, at an output impedance in the 10 to 15 ohms range. These results were reached only after low thermal resistance mounting using a proprietary flip-chip soldering process. The mounted HBT power cells are available in package. They deliver up to 14 W of output power at 2 GHz and a bias voltage of 26 V, with high PAE of up to 71 % and high gain of 14 dB. Thus, these power cells are very promising for power applications with extended bandwidth requirements, such as multi-band base-station amplifiers.