10 nm-gate-length transistors on ultra-thin SOI film: process realization and design optimisation

We demonstrate ultra-thin SOI nMOSFETs with silicon thinned down to 8 nm and gate length as short as 10 nm. TTSD (to control access resistance) and pocket implantation (to extend scaling limits) are validated down to 10 nm. This performance, reported on different devices, evidences the possibility of UTSOI devices.