Abstract:
In this paper the program for two-dimensional simulation of selective etching of the A/sup III/B/sup V/ semiconductors is considered. By creation of algorithm of selectiv...Show MoreMetadata
Abstract:
In this paper the program for two-dimensional simulation of selective etching of the A/sup III/B/sup V/ semiconductors is considered. By creation of algorithm of selective etching it was taken into account the following factors: complexity of a mask, number of used surface orientations, etching solution and so on. On the finishing cycle of the program the working window shows a kind of a resulting structures of diffraction lattices. The results of simulation are compared with experiment.
Date of Conference: 01-05 July 2004
Date Added to IEEE Xplore: 22 November 2004
Print ISBN:5-7782-0463-9