High power 808 nm diode lasers grown by MOCVD using MO group V sources in N/sub 2/ ambient

The paper presents the recent result of an AlGaAs/GaAs high power diode laser emitting at 808 nm grown by MOCVD using TBAs (tertiary-butyl arsines) as the group V source and N
₂
as carrier gas. This is the first report so far for high power AlGaAs/GaAs diode lasers prepared by MOCVD growth using TBA group V MO source in 100% nitrogen ambient. Broad area stripe lasers have been prepared with stripe width of 150 μm. Lasing has been successfully achieved from the wafer with a low threshold current density of 267 A/cm
²
with the laser cavity length of 1000 μm. Laser diode devices with different cavity lengths, 1200 μm, 1000 μm and 800 μm, were cleaved to obtain the internal loss, α
_i
, and internal quantum efficiency, η
_i
, of the devices. The α
_i
received was about 9.7 cm
^-1
and η
_i
of 81% was deduced.