Effect of silicon substrate on the transmission characteristics of integrated antenna

The basic characteristics of integrated dipole antennas on a Si substrate for use in on-chip wireless interconnects have been studied. 2 mm long and 10 /spl mu/m wide integrated dipole antennas were fabricated on a Si substrate with a resistivity of 10 /spl Omega/-cm. and the transmission gain of the antenna was 38 dB at 20 GHz. The transmission gain could be improved by use of high resistivity Si substrates greater than 100 /spl Omega/-cm.