I. Introduction
The era of system-on-a-chip integrated with millions of transistors drives the technology to scale down to ultradeep submicrometer (UDSM) range, 0.25 or below. As feature size decreases, interconnect pitch also shrinks while packaging is becoming denser. Meanwhile, wire aspect ratio (namely, metal height/width) increases from 1.8 in 0.18- processes to 2.7 in 0.07- processes to keep resistance in control for high performance, as shown in Table I [35]. These apparent trends bring up two competitive issues: power efficiency and noise immunity on interconnects. International Technology Roadmap for Semiconductors
Year | 1997 | 1999 | 2002 | 2005 | 2008 |
---|---|---|---|---|---|
Process (nm) | 250 | 180 | 130 | 100 | 70 |
Frequency (MHz) | 750 | 1250 | 2100 | 3500 | 6000 |
Wiring layers | 6 | 6–7 | 7 | 7–8 | . |
Min wire pitch (nm) | 640 | 460 | 340 | 260 | 190 |
Wire aspect ratio | 1.8 | 1.8 | 2.1 | 2.4 | 2.7 |
MPU TRs (106) | 11 | 21 | 76 | 200 | 520 |
Area (mm2) | 300 | 340 | 430 | 520 | 620 |
Max power (W) | 70 | 90 | 130 | 160 | 170 |