Characteristics of the double avalanche region IMPATT diode in millimetric range

The new n/sup +/pvnp/sup +/ avalanche diode structure was proposed some years ago to improve frequency characteristics. This type of diode was named the double avalanche region (DAR) IMPATT diode. This structure includes two avalanche regions inside the diode. The charge carriers multiply in the avalanche region and than drift along the drift zone, v, with constant speed. These carriers multiply once again in the other avalanche zone. The phase delay, produced by the two avalanche zones and the drift zone, is sufficient for negative resistance to be obtained for a wide frequency range. The characteristics of the DAR IMPATT diode can be analyzed on the basis of the numerical precise model. We develop the numerical model of the diode, which permits analysis of the physical processes in the DAR structure. The admittance characteristics of the diode were analyzed in a very wide frequency region. The admittance and generating power dependencies from the amplitude of the first harmonic voltage were analyzed too. The obtained results serve as a first step to a more profound analysis and structure optimization of DAR diodes.