180 GHz f/sub T/ and f/sub max/ self-aligned SiGeC HBT using selective epitaxial growth of the base

This paper describes the device optimization work done with the study of carbon incorporation into the SiGe base of a bipolar deposited by selective epitaxy. First the bipolar fabrication is addressed. Effects of carbon on electrical characteristics are then discussed. The performance of a bipolar transistor, using an optimal carbon profile derived from a design of experiments, is presented. A 180 GHz f/sub T/ and f/sub max/ bipolar device with a BVceo of 1.7 V is demonstrated. It is to the authors' knowledge the best-balanced f/sub T//f/sub max/ performance reported for a fully self-aligned SiGeC HBT using a selective epitaxial base.