1. Introduction
The continuous advances of microelectronics technology are shrinking device dimensions to the submicron region, leading to a reduction of transistor dimensions and power supply voltages, which make possible the implementation of systems ever faster and more complex [1], [4]. However, the amount of charge stored in the circuit nodes is becoming smaller, making the circuit more susceptible to noise sources, such as cosmic rays and a-particles originated by the decay of uranium and thorium impurities present within packages [16]. When these particles hit the silicon bulk, they create minority carriers which, if collected by the source/drain diffusions, could change the voltage value of such nodes producing a transient fault (TF) [13].