Implementation of NQS effects in large-signal BJT models

Large-signal implementation of non-quasistatic (NQS) effects in bipolar transistors is reviewed. An approach strategy is proposed that allows bilateral translation between small- and large-signal equivalent circuits. The approach is illustrated by translating simple small-signal equations commonly used in BJT modeling, as well as more complicated ones proposed in the literature. The present approach extends the state of art by considering arbitrary bias dependence of small-signal time constants.