Performance of AlGaN/GaN HEMTs for 2.8 GHz and 10 GHz power amplifier applications

AlGaN/GaN high electron mobility transistors (HEMTs) have demonstrated great potential for microwave power transmitter applications as required by phased array radar and wireless base stations. In this paper, we report on state-of-the-art power density generated from large gate periphery AlGaN/GaN HEMTs. At 2.8 GHz, 7 W/mm gate periphery (14.7 W total) was obtained under pulsed conditions from 2.1 mm gate periphery devices and 5 W/mm (42 W total) pulsed power was demonstrated from 2/spl times/4.2 mm gate periphery devices. At 10 GHz, 9.2 W/mm (13.8 W total) power was obtained under pulsed conditions from 1.5 mm gate periphery devices with drain bias up to 55 V. The 4/spl times/4.2 mm (16.8 mm/sup 2/) multiple-die hybrid power amplifiers at 2.8 GHz and 4/spl times/1.5 mm (6 mm/sup 2/) multiple-die package at 10 GHz were also evaluated.