Abstract:
We attain a PIN photodiode combining high responsivity, fast response and low capacitance in BiCMOS technology. Only a slight process modification, having no verifiable i...Show MoreMetadata
Abstract:
We attain a PIN photodiode combining high responsivity, fast response and low capacitance in BiCMOS technology. Only a slight process modification, having no verifiable influence on the transistor parameters is necessary. We achieve bandwidths of 625 MHz and 240 MHz at 670 and 780 nm as well as a quantum efficiency of 96.5%.
Published in: Digest. International Electron Devices Meeting,
Date of Conference: 08-11 December 2002
Date Added to IEEE Xplore: 06 February 2003
Print ISBN:0-7803-7462-2