Observation of changes in the single event upset rate in 4MB SRAM due to intervening materials in a neutron environment

We observe a significant increase (by a factor of approximately three) in the single event upset (SEU) rate in 4MB SRAM by modifying the incident high-energy neutron field with polyethylene of thickness between 20.5g/cm/sup 2/-25.5g/cm/sup 2/. In comparison, these thicknesses of the same intervening materials greatly reduce the tissue equivalent dose as measured with a tissue equivalent proportional counter (TEPC). These results indicate intervening materials that may provide a measure of radiation shielding for humans may be detrimental to electronic systems.