Comparison studies on growth modes of MBE grown ZnSe on GaAs [111] A and GaAs [111] B, using RHEED

In the last three decades, research into wide bandgap II-VI semiconductors was mainly concentrated on the growth and characterisation of ZnSe based structures on GaAs [001] substrates. Therefore, very little is known about the growth processes on {111} GaAs surfaces. This paper presents the comparison of surface processes during MBE hetero-epitaxial growth of ZnSe epilayers on GaAs [111] A, and GaAs [111] B substrates using reflection high-energy diffraction (RHEED).