Effects of underlying dielectric on boron implanted polysilicon in presence of fluorine

This paper reports the effect of fluorine on polysilicon resistors and discusses this effect as a function of the underlying layer on which polysilicon is deposited for a wide range of doping levels. It also compares the behavior of amorphous silicon resistors to polysilicon resistors for similar conditions.

I. Introduction

Polysilicon is widely used in VLSI technology as gate in CMOS devices, poly-emitter in high performance bipolar transistors, as capacitor plate in advanced stacked capacitors, in DRAM cells, as resistors or just as interconnect between two terminals [1]–[6]. The resistance of polysilicon varies considerably depending upon the requirement in any integrated circuit.