Modeling hysteresis phenomena in nanotube field-effect transistors

A model is developed to explain a hysteresis observed experimentally in nanotube field-effect transistors. The model explains the hysteresis through trapping of electrons in an oxide layer. The Fowler-Nordheim tunneling mechanism is held responsible for the electron injection. The influence of different parameters such as the sweeping rate or the range of the gate voltage on the hysteresis is studied and compared with experimental results.