Analysis of resist LER for the patterns replicated by proximity X-ray lithography

The critical dimensions (CD) of LSI patterns are becoming 100 nm and narrower, and the requirement for CD control in lithography is becoming less than 10 nm. At such dimensions line edge roughness (LER) of resist patterns cannot be overlooked. This paper discusses the dependence of pattern image on LER, by comparison of observed roughness and measured dissolution rates of experimental resists with calculated images.