Field emitter arrays for low voltage applications with sub 100 nm apertures and 200 nm period

Fabricated 70-nm-gate aperture silicon FEAs with turn-on voltages as low as 10 V. We demonstrated emission currents of 1 /spl mu/A at V/sub g/ of 13 V. Transmission electron microscopy (TEM) of the tips verified that the tip radii have a log-normal distribution with a mean radius of 4.5 nm. The measured tip radii are consistent with the electrical characterization of the devices.