Development of ramp-edge SNS junctions using highly stable normal-metal barrier materials

By using a cation-modified and corrosion-resistant compound of (Pr/sub y/Gd/sub 0.6-y/)Ca/sub 0.4/Ba/sub 1.6/La/sub 0.4/Cu/sub 3/O/sub 7/ (y=0.4, 0.5, and 0.6) as normal-metal barrier materials, high-temperature superconducting Josephson junctions have been fabricated in a ramp-edge superconductor/normal-metal/superconductor (SNS) configuration. We have tuned the Pr substitution level in order to achieve the optimal electrical resistivity of the barrier layer for high-performance SNS junctions. The junctions fabricated with these normal-metal barriers show well-defined RSJ-like current vs voltage characteristics at liquid-nitrogen temperature. The junction performance is mainly controlled by the N-layer instead of the interface. We have also fabricated dc superconducting quantum interference devices based on ramp-edge SNS technology with these normal-metal barriers. The ratio of peak-to-peak voltage modulation of the superconducting quantum interference devices to the I/sub c/R/sub n/ product is more than 30%.