Optimization of safe-operating-area using two peaks of body-current in submicron LDMOS transistors

The analysis of hot-electron-limited SOA (Safe-Operating-Area) and electrical SOA using two peaks of body current in 20 V LDMOS transistors was investigated for the first time. The origin of the two peaks can be explained in terms of hot carrier injection phenomena. The first peak shows the appearance of weak impact ionization related to the device degradation and the second peak shows the occurrence of the snap-back phenomenon predicting device destruction, respectively.