Abstract:
Proton irradiation was conducted on Czochralski (Cz) and floating zone (Fz) boron-doped p-type Si wafers at room temperature with the doses ranging from 1/spl times/10/su...Show MoreMetadata
Abstract:
Proton irradiation was conducted on Czochralski (Cz) and floating zone (Fz) boron-doped p-type Si wafers at room temperature with the doses ranging from 1/spl times/10/sup 13/ cm/sup -2/ to 2/spl times/10/sup 15/ cm/sup -2/. A p-n junction formed in the Cz wafers when the dose reached a value between 1.0/spl times/10/sup 13/ cm/sup -2/ and 3/spl times/10/sup 13/ cm/sup -2/ while a p-n-p structure formed in the Fz wafers. The formation of p-n and p-n-p structure was confirmed by the combined use of Hall measurements, current-voltage (I-V) measurements, spreading resistance (SR) measurements, and cross-sectional electron beam-induced current (EBIC) measurements.
Published in: Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)
Date of Conference: 15-22 September 2000
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:0-7803-5772-8
Print ISSN: 0160-8371
