High power AlGaAs/GaAsP-broad area laser diodes with 1 /spl mu/m- and 2 /spl mu/m large optical cavity structures

Summary form only given. High power broad area (BA) laser diodes emitting at a wavelength of about 800 nm are key elements for laser technologies in pumping of solid state lasers and medical applications. For most applications, it is useful to diminish the vertical beam divergence. In this paper, this is realised by increasing the vertical spot size at the laser facet by widening the large optical cavity (LOC) structure for AlGaAs-GaAsP broad area laser diodes. The beam quality in vertical and lateral direction as well as the high power and aging behaviour are discussed, which are essential for laser applications.