Abstract:
A terahertz differential eight-stage amplifier fabricated using state-of-the-art 125 nm double-heterojunction bipolar transistors (DHBT) is presented. The four-port unit-...View moreMetadata
Abstract:
A terahertz differential eight-stage amplifier fabricated using state-of-the-art 125 nm double-heterojunction bipolar transistors (DHBT) is presented. The four-port unit-cell chain is designed for optimum forward differential gain with no even and odd-mode reverse gains. Unbalanced single-ended feed networks are added to preserve the amplifier gain without inducing oscillations. The proposed feed scheme is validated by a stable amplifier operation in 325-to-450 GHz range with the peak gain of 22 dB at 375 GHz.
Published in: IEEE Microwave and Wireless Components Letters ( Volume: 22, Issue: 10, October 2012)