Advanced 2D/3D ESD device simulation-a powerful tool already used in a pre-Si phase

The tremendous advantages of adequate 2D/3D device simulations for ESD optimization are demonstrated. The pre-silicon ESD-protection concept of a new CMOS technology was completely based on high-current I-V characteristics simulated for different NMOS variations. Silicon verification proved the excellent simulation quality of the electrical behavior and, furthermore, of ESD thresholds.