Abstract:
IEGT's (Injection Enhanced Gate transistors) and HV-IGBT's are inherently unstable inducing harmful current crowding and oscillation among paralleled chips or packages. T...Show MoreMetadata
Abstract:
IEGT's (Injection Enhanced Gate transistors) and HV-IGBT's are inherently unstable inducing harmful current crowding and oscillation among paralleled chips or packages. The instability problem has become crucial in device design and application. This paper will describe the mechanism of the instability and propose effective solutions for device and package design against the problem.
Published in: 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)
Date of Conference: 22-25 May 2000
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:0-7803-6269-1
Print ISSN: 1063-6854