An inverted delta-doped V-shaped InGaP/In/sub x/Ga/sub 1-x/As pseudomorphic high electron mobility transistor

We have presented a high-performance InGaP/In/sub x/Ga/sub 1-x/As pseudomorphic high electron mobility transistor (PHEMT) in this work. Due to the presence of inverted delta-doped V-shaped InGaP/In/sub x/Ga/sub 1-x/As structure, the good carrier confinement together with high-breakdown voltage and a flat and wide transconductance operation regime are expected. Experimentally, the fabricated device (1/spl times/100 /spl mu/m/sup 2/) shows a high gate-to-drain breakdown voltage of 30 V and a high output drain saturation current density of 826 mA/mm at V/sub GS/=2.5 V. The high transconductance expands over a very broad operation range with the maximum value of 201 mS/mm. Meanwhile, the studied device exhibits a good microwave frequency linearity.