Fabrication of an Electrically Pumped Lead-Chalcogenide Midinfrared Laser on a [110] Oriented PbSnSe Substrate

The fabrication of an electrically pumped lead salt- based edge-emitting laser on a polished [110]-oriented PbSnSe substrate is presented. The laser structure was grown by molecular beam epitaxy and consisted of a PbSrSe-PbSe multiple quantum- well active region sandwiched between PbSrSe confinement layers. Pulsed laser emission was observed at lambda = 5.2 mum wavelength up to 158 K with a maximum of 40% duty cycle of current pumping. The repeatability in continuous lasing emission power was also examined.