Characterizing Bandgap Gratings in GaAs : AlAs Superlattice Structures Using Interface Phonons

Interface Raman modes were used to study quantum-well intermixing in GaAs : AlAs superlattice (SL) structures using room-temperature spatially resolved Raman spectroscopy. The intermixing was observed to degrade the interface mode intensity, which can be used as a sensitive indicator of the SL quality. This feature, along with spatially resolved photoluminescence, was used to investigate bandgap modulation in periodically intermixed bandgap gratings, fabricated using implantation induced disordering. Using interface modes instead of bulk-like modes is a promising avenue for characterizing SL structures that rely on intricate bandgap features