AlInP-GaInP-GaAs UV-enhanced photovoltaic detectors grown by gas source MBE

Al/sub 0.52/In/sub 0.48/P-Ga/sub 0.51/In/sub 0.49/P-GaAs photovoltaic detectors using GaInP as the light absorption layer and AlInP as the widow layer have been fabricated by using gas source molecular beam epitaxy, and their performance has been characterized in detail. The detectors show infrared-blind and ultraviolet-enhanced features and have good response in visible band, which makes them a good candidate in certain applications. Excellent performance has been demonstrated on the detectors, a resistance area product of R/sub 0/A=1.3/spl times/10/sup 8/ /spl Omega//spl middot/cm/sup 2/, and an open-circuit voltage of V/sub oc/>1.05 V have been measured at room temperature.