Waveguide-type PnpN optical thyristor operating at 1.55 μm

Waveguide-type PnpN depleted optical thyristors operating at 1.55 μm are proposed and fabricated for the first time. In the optical thyristors, we employ InGaAs-InP multiple quantum-well (MQW) and InGaAsP bulk layers for the active n- and p-layers. The thyristors show sufficient nonlinear s-shape I-V characteristics and spontaneous emission along the waveguide. Very low switching voltages of 2.1 and 2.0 (V) for bulk and MQW thyristors with L=300 μm and 350 μm respectively are measured.