Implanted-planar-buried-heterostructure, graded-index, separate-confinement-heterostructure laser in GaAs/AlGaAs

For the implanted planar buried-heterostructure, graded-index, separate-confinement-heterostructure (IPBH-GRINSCH) laser in (AlGa)As/GaAs, ion implantation is used to form p-n-p-n current blocking layers and to create a buried-heterostructure waveguide. This results in significantly reduced fabrication complexity of high-quality, index-guided laser diodes compared to regrowth techniques, and in contrast to diffusion-induced disordering, allows for the creation of self-aligned, buried, blocking junctions. Kink-free, CW operation of single-stripe IPBH-GRINSCH lasers along with single-lobed near-field and far-field optical emission patterns, consistent with index-guided operation, is demonstrated.<
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