Suppression of lateral transient enhanced dopant diffusion by nitrogen implantation and its application to fully depleted MOSFETs/SIMOX

This paper confirms that nitrogen ion implantation is effective in suppressing the lateral transient enhanced diffusion (TED) of implanted impurity dopants during annealing and that the suppressed TED for highly doped source and drain regions provides the MOSFET/SIMOX with a controlled effective channel length.