Impact of voids in Ti-salicided p/sup +/ polysilicon lines on TiSi/sub 2/ electrical properties

We report the effect of voids in Ti-salicided narrow p/sup +/-doped polysilicon lines on the electrical performance of the TiSi/sub 2/ films. The variation in the TiSi/sub 2/ sheet resistance was found to correlate well to the void density, which is a function of the poly-Si implant species and dose, the gate line-width and the p/sup +/ anneal. In addition, we find that the low frequency noise measurements are a good diagnostic method to determine the extent of voiding in silicided films.