I. Introduction
The wide frequency spectrum used for milli-meter and microwave applications requires different switch technologies for cover various bands of frequency and also showing a major positive impact on reconfigurable system like antennas [1]–[3]. Electronic/mechanical switching plays a critical role in ensuring reconfigurability in devices such as beam steering, frequency tuning and beam shaping [2], [7]. Recently, RF MEMS switches have displayed excellent RF characteristics, including lower pull-in voltage, higher isolation, lower insertion loss, micro-watt range power consumption, small size, weight and very low intermodulation distortion as compare to PIN diode and MOSFET switches. The resistive switch's ability to perform well 0.8 to 8 GHz was a significant leap forward over semiconductor and mechanical switches [12]. In addition with MEMS switch require an electrostatic actuation or pull-in voltage of 25–70 V, which necessitates the use of CMOS step-down converters to down the input 2–6 V control voltage (mobile applications) to the fulfill the requirement of low actuation voltage as much needed for low power consumption devices [2].