High efficiency 0.4 /spl mu/m gate LDMOS power FET for low voltage wireless communications

A low cost, high efficiency 4th generation silicon MOSFET using RFLDMOS (LV4) 0.4 /spl mu/m technology is presented which has been developed for high frequency (1-2 GHz) and low voltage (2.2-12.5 V) applications. Key results include 78% PAE at 31.8 dBm for 3.6 V, 900 MHz AMPS applications, and 63% PAE, 12.5 dB gain, 30.5 dBm for 2.4 V, 900 MHz for 2-way paging applications.