A fluxless process of producing In-Au joints on copper substrates

Based on the oxidation-free fluxless bonding technology, we have developed a bonding process to manufacture In-Au joints on copper substrates. 4 mm/spl times/4 mm Si blank dice and 6 mm/spl times/6 mm copper substrates are used. The dice are deposited with an indium- rich Cr-In-Au multilayer structure in one high vacuum to prevent oxidation. Right after deposition, the outer Au layer interacts with In layer to form AuIn/sub 2/ intermetallic compound. This compound is quite stable and thus can protect the In layer against oxygen penetration while exposing to ambient. On the other hand, it can be easily dissolved by the molten In during the bonding process. The substrate is deposited with Cr and Au. The dice are bonded to the substrates at 180/spl deg/C in an inert environment. Nearly void-free joints have been obtained as examined by a 75 MHz Scanning Acoustic Microscope (SAM). Cross sections of several samples are studied using SEM and EDX to identify the microstructure and composition of the joints. A shear test has been performed according to MIL-STD-883C. All the well-bonded devices meet the shear test force requirement. Despite the large mismatch on the thermal expansion coefficient between silicon and copper, no die cracking is observed on the 30 samples produced. To assess further endurance, two samples undergo thermal cycling test between -50 and 120/spl deg/C for 20 cycles. SAM examination indicates that the joints incur little degradation after the test. This bonding method requires neither flux nor scrubbing action. It is thus particularly attractive for bonding devices that cannot be exposed to flux.