InGaAs/GaAs strained quantum wires grown by OMCVD on corrugated substrates

Self-ordered, strained InGaAs/GaAs quantum structures are grown on V-grooved GaAs substrates. Indium segregation at the bottom of the groove results in the formation of a vertical InGaAs quantum well structure with In-enriched composition. The lateral definition permits the growth of defect-free strained structures with thickness exceeding that achieved with planar epitaxy. We study the influence of the nominal thickness and In content on the photoluminescence peak wavelength of V-grooved quantum wires. Finally, room temperature emission at 1.12 /spl mu/m with relatively narrow linewidth (30-35 meV) is demonstrated.