Contents I. Introduction
NBTI in p-MOSFETs and PBTI in n-MOSFETs are crucial reliability concerns in HKMG devices [1]–[7]. NBTI and PBTI show similar time dependence of DC stress and recovery and similar duty cycle dependence of AC degradation that raised interest in their explanation by a common physical framework. Recently, several key universal NBTI experimental signatures were identified and modeled using uncorrelated contributions from generated interface traps , hole trapping in bulk traps that are both pre-existing and generated , albeit in SiON devices [6]. On the other hand, HKMG PBTI is generally perceived to be due to electron trapping in High- (HK) bulk insulator traps [3]. Since N and P BTI show similar signatures, recent reports attempt to model NBTI also as hole trapping in SiON (IL) bulk traps [4], [5], which ignores trap generation in spite of ample evidence in the literature [7], [8]. Attempts have been made to model both NBTI and PBTI using dispersive trapping, with large and questionable spread in trapping time constants [3]–[5]. In this work, (a) irrefutable proof of trap generation is shown during NBTI and PBTI that exhibits (b) similar DC stress/recovery time dependence and AC duty cycle dependence, (c) SiON NBTI model of [6] is extended to predict degradation and recovery in larger variety of SiON and HKMG devices with similar model parameters, (d) similar to NBTI, PBTI is also explained using uncorrelated contributions from trap generation and electron trapping, and (e) the impact of stress condition on the relative dominance of underlying BTI components are explained. S<sc>i</sc>ON D<sc>evice</sc> D<sc>etails</sc> G<sc>ate</sc> F<sc>irst</sc> HK-MG(T<sc>i</sc>N) D<sc>evice</sc> D<sc>etails</sc>
