I. Introduction
SiC power transistor is expected as an attractive alternative to Si power transistor such as Si-IGBT in order to improve the efficiency of a power conversion equipment, e.g., inverters for electric vehicles or uninterruptible power supply units [1] [2]. This is due to the fact that SiC has lower on-resistance and higher switching ability. However, when a power circuit designer tries to bring out the switching performance of an SiC transistor to its maximum level in a bridge circuit, it faces the following problem.