Organic semiconductors for fast-neutron detection

The efficient detection of fast neutrons is essential for nuclear non-proliferation monitoring. Although semiconductor devices such as silicon sensors have been used for thermal neutron detection using Gd, B or Li based converter layers, direct fast-neutron detection with hydrogen-containing semiconductor devices has not yet been accomplished. In this paper the fabrication and characterization of perylene (C
₂₀
H
₁₂
) semiconductor devices for fast neutron detection purposes are reported. Fast neutrons from an
²⁴¹
Am/Be source were detected with fabricated perylene semiconductor devices. Perylene crystals were grown from benzene and 1,4-dioxane by the slow evaporation method. Perylene crystallizes in the monoclinic system and exhibits a layered structure.