Abstract:
In summary, we have compared SOI and BOI FinFET device characteristics and the performance of digital circuits designed with those devices. For low voltage supply, SHE is...Show MoreMetadata
Abstract:
In summary, we have compared SOI and BOI FinFET device characteristics and the performance of digital circuits designed with those devices. For low voltage supply, SHE is modest in both devices and during digital circuit operations. SOI FinFET CMOS inverter and SRAM cell characteristics are very similar to BOI ones. Considering the lesser fabrication complexity, SOI FinFET thus would be more preferable than BOI FinFET for the design of low voltage digital circuits.
Date of Conference: 07-09 December 2011
Date Added to IEEE Xplore: 19 January 2012
ISBN Information: