A DC to 30GHz ultra-wideband CMOS T/R switch

A differential low-cost T/R switch based on a 0.18µm SiGe BiCMOS process with only CMOS components is developed. The proposed switch achieves an ultra-wide bandwidth of 30GHz. For single-end SPDT applications, the switch has 1.5dB to 3.3dB insertion loss and 20dB to 80dB isolation. Input/output matching has been realized from DC to 40GHz. The switch requires no biasing voltage except the 1.8V voltage supply and ground potentials, which greatly enhances its application feasibility. The switch also has a compact chip area of 0.025mm
²
(for SPDT) and 0.05mm
²
for differential SPDT applications.