Transformer-isolated gate drive design for SiC JFET phase-leg module

In order to take full advantage of the SiC devices' high-temperature and high-frequency capabilities, a transformer isolated gate driver is designed for the SiC JFET phase leg module to achieve a fast switching speed of 26V/ns and a small cross-talking voltage of 4.2V in a 650V and 5A inductive load test. Transformer isolated gate drive circuits suitable for high-temperature applications are compared with respect to different criteria. Based on the comparison, an improved edge triggered gate drive topology is proposed. Then, using the proposed gate drive topology, special issues in the phase-leg gate drive design are discussed. Several strategies are implemented to improve the phase-leg gate drive performance and alleviate the cross-talking issue. Simulation and experimental results are given for verification purposes.