I. Introduction
In the multi-core era, it is essential to be able to have a large and fast main memory for running multi-threaded, multi-programmed workloads efficiently. To this end, traditional DRAM memories have become less attractive as scaling becomes a problem and energy efficiency gets worse. Phase Change Memory (PCM) [5] [6] [9] has gained increasing popularity as a potential solution. An important advantage afforded by PCM is its high capacity, which has proven useful in the reduction of page faults.