Radiation studies on the UMC 180nm CMOS process at GSI

GRISU test ASICs were irradiated with different types of heavy ions, fluences up to 10
¹²
ions/cm
²
and with a LET in the range of 1–60MeV cm
²
/mg. Cross section for SEU/SET were measured during the tests. Furthermore TID measurements were applied. Results on degradation and annealing are reported.