Highly-scaled 3.6-nm ENT trapping layer MONOS device with good retention and endurance

Novel MONOS CTF, with record thinnest 3.6 nm ENT trapping layer, has a large 3.1 V 10-year extrapolated retention window at 125°C and excellent 10
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endurance at a fast 100 µs and ±16 V program/erase. This is achieved using an As+-implanted higher к trapping layer with deep 5.1 eV work-function of As. In contrast, the un-implanted device only has a small 10-year retention window of 1.9 V at 125°C.