Guard ring effect for through silicon via (TSV) noise coupling reduction

In 3-dimensional integrated circuit (3D-IC) using through silicon via (TSV), TSV noise coupling is one of the most significant considerations for circuit design. For 2-dimensional system, p+ guard ring and deep n-well is used for substrate noise coupling suppression, but the effect of these shielding techniques is not studied in 3D-IC. In this paper, the noise isolation effect of p+ guard ring in 3D-IC is validated using the TSV noise coupling model and 3D-field solver. Additionally deep n-well guard ring is proposed for more noise isolation, and validated by the TSV noise coupling model. It has more noise isolation than p+ guard ring at frequencies over several GHz.