Numerical investigation of the total SOA of trench field-plate LDMOS devices

A numerical investigation of electrical and thermal properties of a lateral trench field-plate (TFP) LDMOS is proposed. Beside the advantage in terms of specific on-resistance (R
_SP
) vs. breakdown voltage (V
_BD
) trade-off, achieved with a proper optimization of the geometrical and doping parameters, the use of deep trenches is discussed here with particular attention to their impact on the electrical safe-operating area (SOA), hot-carrier stress (HCS) reliability, self-heating effects (SHE) and thermal SOA.